CRXSP160M120G2Q
Features
- Qualified according to AEC Q101
- CRM G2 SIC MOSFET Technology
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Avalanche Ruggedness
- Fast Reverse Recovery
Applications
- Solar Inverters
- High Voltage DC/DC Converters
- On Board Charger(OBC)
- EV Charger
Si C MOSFET 1200V, 160mΩ, 17A Product Summary
VDS RDS(on)_typ ID
1200V 160mΩ 17A
100% Avalanche Tested
Package Marking and Ordering Information
Part # CRXSP160M120G2Q
Marking X160M120G2Q
Package TO-263-7
Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current
VGS=15V，TC = 25°C VGS=15V，TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10m H, Rg=25Ω) Gate-Source voltage (dynamic)a1 Gate-Source voltage (static)a2 Power dissipation (TC=25°C,TJ=175°C) Operating Junction and Storage Temperature
Packing Reel
Qty 800pcs
Symbol VDSmax
ID(pulse) EAS
VGSmax VGSop
PD Tj,Tstg
Value...
