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CRXSP160M120G2Q - 1200V 17A SiC MOSFET

Datasheet Summary

Features

  • Qualified according to AEC Q101.
  • CRM G2 SIC MOSFET Technology.
  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Avalanche Ruggedness.
  • Fast Reverse Recovery.

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Datasheet preview – CRXSP160M120G2Q

Datasheet Details

Part number CRXSP160M120G2Q
Manufacturer CR Micro
File Size 1.32 MB
Description 1200V 17A SiC MOSFET
Datasheet download datasheet CRXSP160M120G2Q Datasheet
Additional preview pages of the CRXSP160M120G2Q datasheet.

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Full PDF Text Transcription

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Features • Qualified according to AEC Q101 • CRM G2 SIC MOSFET Technology • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Avalanche Ruggedness • Fast Reverse Recovery Applications • Solar Inverters • High Voltage DC/DC Converters • On Board Charger(OBC) • EV Charger CRXSP160M120G2Q SiC MOSFET 1200V, 160mΩ, 17A Product Summary VDS RDS(on)_typ ID 1200V 160mΩ 17A 100% Avalanche Tested Package Marking and Ordering Information Part # CRXSP160M120G2Q Marking X160M120G2Q Package TO-263-7 Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current VGS=15V，TC = 25°C VGS=15V，TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10mH, Rg=25Ω) Gate-Source voltage (dynamic)a1 Gate-So
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