CRXSP160M120G2Q Key Features
- Qualified according to AEC Q101
- CRM G2 SIC MOSFET Technology
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Avalanche Ruggedness
- Fast Reverse Recovery
- Part: CRXSP160M120G2Q
- Manufacturer: CR Micro
- Size: 1.32 MB
Related CR Micro Datasheets
| Part Number | Description |
|---|---|
| CRXB08D065G3 | 650V Silicon Carbide Schottky Diode |
| CRXB10D065G2 | 650V Silicon Carbide Schottky Diode |
| CRXB20D120G3 | 1200V Silicon Carbide Schottky Diode |
| CRXB30D120G2 | 1200V Silicon Carbide Schottky Diode |
| CRXD10D065G3 | 650V Silicon Carbide Schottky Diode |
CRXSP160M120G2Q Description
When using MOSFET Body Diode VGSmax = -5V/+22V a2: MOSFET can also safely operate at 0/+18 V ©China Resources Microelectronics Limited Page 1 Parameter , junction case. Max CRXSP160M120G2Q SiC MOSFET 1200V, 160mΩ, 17A Symbol RthJC RthJA Value 1.63 40 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol min.