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CRXU30D065G2 Datasheet 650V Silicon Carbide Schottky Diode

Manufacturer: CR Micro

Datasheet Details

Part number CRXU30D065G2
Manufacturer CR Micro
File Size 873.82 KB
Description 650V Silicon Carbide Schottky Diode
Download CRXU30D065G2 Download (PDF)

General Description

This product family is CRM's second generation SiC JBS, with lower VF and offers state of the art performance.

It is designed for high frequency applications where high efficiency and high reliability are required.

It is qualified and manufactured on the productive 6 inch SiC line in China fully owned by CR MICRO.

Overview

CRXU30D065G2 Silicon Carbide Schottky Diode 650 V, 30 A, 81 nC.

Key Features

  • Low conduction loss due to low VF.
  • Extremely low switching loss by tiny QC.
  • Highly rugged due to better surge current.
  • Industrial standard quality and reliability.