CS100N03B4-1 Description
： CS100N03 B4-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID（Silicon limited current） PD RDS(ON)Typ 30 100 90 4 V A W mΩ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.