CS100N03B8-1 datasheet by CR Micro.
| Part number | CS100N03B8-1 |
|---|---|
| Datasheet | CS100N03B8-1-CRMicro.pdf |
| File Size | 380.04 KB |
| Manufacturer | CR Micro |
| Description | Silicon N-Channel Power MOSFET |
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： CS100N03 B8-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID（Silicon limited current） PD RDS(ON)Typ 30 100 90 4 V A W mΩ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard.
| Part Number | Description |
|---|---|
| CS100N03B4-1 | Silicon N-Channel Power MOSFET |
| CS100N03A4-G | Silicon N-Channel Power MOSFET |
| CS100N06A3 | Silicon N-Channel Power MOSFET |
| CS100N06A4 | Silicon N-Channel Power MOSFET |
| CS100N06A8 | Silicon N-Channel Power MOSFET |
| CS100N06D3 | Silicon N-Channel Power MOSFET |
| CS100N06D3-G | Silicon N-Channel Power Trench MOSFET |
| CS100N06D4 | Silicon N-Channel Power MOSFET |
| CS100N06D8 | Silicon N-Channel Power MOSFET |
| CS100N08A0 | Silicon N-Channel Power MOSFET |
