CS20N65ANH
Overview
: VDSS 650 CS20N65 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 250 RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.