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Silicon N-Channel Power MOSFET
○R
CS20N65 ANH
General Description：
VDSS
650
CS20N65 ANH, the silicon N-channel Enhanced
ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
250
RDS(ON)Typ
0.37
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:65nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS20N65ANH Datasheet
