CS20N65ANH Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS20N65 ANH General Description： VDSS CS20N65 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:65nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche...