CS2837AND Datasheet | CR Micro

Description ： VDSS CS2837 AND, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 230 which reduce the conduction loss, improve switching RDS(ON)Typ 0.18 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96n C) l Low Reverse transfer capacitances(Typical:44p F) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Gate source ESD (HBM-C= 100p F, R=1.5kΩ) Operating Junction and Storage Temperature Range Maximum Temperature for Soldering 500 20 13 80 ±30 1500 250 7.1 5.0 230 1.84 150，- 55 to 150 300 V A W Ω Units V A A A V m J m J A V/ns W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 2015V01 CS2837 AND ○R Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol...