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Silicon N-Channel Power MOSFET
○R
CS2837 AND
General Description：
VDSS
500
CS2837 AND, the silicon N-channel Enhanced ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃)
230
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.18
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
CS2837AND Datasheet
