CS30N50ANR Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS30N50 ANR General Description： VDSS CS30N50 ANR, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 250 which reduce the conduction loss, improve switching RDS(ON)Typ 0.09 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.12Ω) l Low Gate Charge (Typical Data:153 nC) l Low Reverse transfer capacitances(Typical:29.7 pF) l 100% Single Pulse avalanche...