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CS3N150AHR - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤6.5Ω).
  • Low Gate Charge (Typical Data: 37.6nC).
  • Low Reverse transfer capacitances(Typical:2.8pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3N150AHR
Manufacturer CR Micro
File Size 679.62 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N150AHR Datasheet

Full PDF Text Transcription for CS3N150AHR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS3N150AHR. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R CS3N150 AHR General Description： CS3N150 AHR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...

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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 1500 3 32 5.0 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PH, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤6.5Ω)  Low Gate Charge (Typical Data: 37.6nC)  Low Reverse transfer capacitances(Typical:2.8pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor

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