CS3N150AHR Description
： CS3N150 AHR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 1500 3 32 5.0 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PH, which accords with the RoHS...
CS3N150AHR Key Features
- Fast Switching
- Low ON Resistance(Rdson≤6.5Ω)
- Low Gate Charge (Typical Data: 37.6nC)
- Low Reverse transfer capacitances(Typical:2.8pF)
- 100% Single Pulse avalanche energy Test