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CS3N80A3H1-G - Silicon N-Channel Power MOSFET

Datasheet Details

Part number CS3N80A3H1-G
Manufacturer CR Micro
File Size 773.60 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N80A3H1-G Datasheet

General Description

: CS3N80 A3H1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-251, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET ○R CS3N80 A3H1-G General.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤4.8Ω).
  • Low Gate Charge (Typical Data:18nC).
  • Low Reverse transfer capacitances(Typical:7pF).
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.