CS3R50 A4RP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
Fast Switching.
Low ON Resistance(Rdson≤3.5Ω).
Low Gate Charge (Typical Data:7.3 nC).
Low Reverse transfer capacitances(Typical: 1.3pF).
100% Single Pulse avalanche energy Test.
Halogen Free
VDSS ID PD(TC=25℃) RDS(ON)Typ
500
V
3
A
50
W
3.0
Ω.
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Silicon N-Channel Power MOSFET ○R CS3R50 A4RP-G General Description： CS3R50 A4RP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Techn...
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annel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤3.5Ω) Low Gate Charge (Typical Data:7.3 nC) Low Reverse transfer capacitances(Typical: 1.3pF) 100% Single Pulse avalanche energy Test Halogen Free VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 3 A 50 W 3.0 Ω Applications： Motor
CS3R50A4RP-G Datasheet
