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CS3R50A4RP-G - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

CS3R50 A4RP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤3.5Ω).
  • Low Gate Charge (Typical Data:7.3 nC).
  • Low Reverse transfer capacitances(Typical: 1.3pF).
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 3 A 50 W 3.0 Ω.

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Datasheet Details

Part number CS3R50A4RP-G
Manufacturer CR Micro
File Size 807.98 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3R50A4RP-G Datasheet
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Silicon N-Channel Power MOSFET ○R CS3R50 A4RP-G General Description: CS3R50 A4RP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features:  Fast Switching  Low ON Resistance(Rdson≤3.5Ω)  Low Gate Charge (Typical Data:7.3 nC)  Low Reverse transfer capacitances(Typical: 1.3pF)  100% Single Pulse avalanche energy Test  Halogen Free VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 3 A 50 W 3.0 Ω Applications: Motor driver.
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