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CS4N80A3R-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤3.8Ω).
  • Low Gate Charge (Typical Data:19.8 nC).
  • Low Reverse transfer capacitances(Typical:4.4 pF).
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet Details

Part number CS4N80A3R-G
Manufacturer CR Micro
File Size 910.21 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N80A3R-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS4N80 A3R-G General Description： CS4N80 A3R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251 which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤3.8Ω)  Low Gate Charge (Typical Data:19.8 nC)  Low Reverse transfer capacitances(Typical:4.4 pF)  100% Single Pulse avalanche energy Test  Halogen Free Applications： Electric welder、Inverter.