GENERAL DESCRIPTION
： CS50N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. FEATURES
： l Fast Switching l Low ON Resistance(Rdson≤51mΩ) l Low Gate Charge (Typical Data: 49.4nC) l Low Reverse transfer capacitances(Typical:34pF) l 100% Single Pulse avalanche energy Test APPLICATIONS
： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS 200 ID 50 PD(TC=25℃) 250 RDS(ON)Typ 42 Rating 200 50 38.5 200 ±30 1700 5.0 250 2.0 150，–55 to 150 300 V A W mΩ Units V A A A V mJ V/ns W W/℃ ℃ ℃ WUXI CHINA RESOURCES HUAJING M ICROELECTRONICS C O., LTD.
CR Micro
