CS6N120AHR-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS6N120 AHR-G General Description： CS6N120 AHR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 1200 6 43 2.3 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PH, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤2.9Ω) - Low Gate Charge (Typical Data:13 nC) - Low Reverse transfer capacitances(Typical:.1.8 pF) - 100% Single Pulse avalanche energy...