CS6N120AHR-G Description
： CS6N120 AHR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 1200 6 43 2.3 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PH, which accords with the RoHS...
CS6N120AHR-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤2.9Ω)
- Low Gate Charge (Typical Data:13 nC)
- Low Reverse transfer capacitances(Typical:.1.8 pF)
- 100% Single Pulse avalanche energy Test
- Halogen Free