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CS6N120AHR-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤2.9Ω).
  • Low Gate Charge (Typical Data:13 nC).
  • Low Reverse transfer capacitances(Typical:.1.8 pF).
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet Details

Part number CS6N120AHR-G
Manufacturer CR Micro
File Size 921.01 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N120AHR-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS6N120 AHR-G General Description： CS6N120 AHR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 1200 6 43 2.3 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PH, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤2.9Ω)  Low Gate Charge (Typical Data:13 nC)  Low Reverse transfer capacitances(Typical:.1.8 pF)  100% Single Pulse avalanche energy Test  Halogen Free Applications： Electric welder、Inverter.