CS6N90B4R-G Overview
： CS6N90 B4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
CS6N90B4R-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤2.5Ω)
- Low Gate Charge (Typical Data: 30.1nC)
- Low Reverse transfer capacitances(Typical:6.4pF)
- 100% Single Pulse avalanche energy Test
- Halogen Free