Datasheet Summary
Silicon N-Channel Power MOSFET
○R
CS8N25 A4R
General Description：
VDSS
CS8N25 A4R, the silicon N-channel Enhanced VDMOSFETs, ID
8 is obtained by the self-aligned planar Technology which reduce
PD(TC=25℃)
75 the conduction loss, improve switching performance and
RDS(ON)Typ
0.36 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤0.47Ω)
- Low Gate Charge (Typical Data: 12.8nC)
- Low Reverse transfer capacitances(Typical: 7.9pF)
- 100% Single Pulse avalanche...
