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Silicon N-Channel Power MOSFET
○R
CS8N25 A4R
General Description：
VDSS
250
CS8N25 A4R, the silicon N-channel Enhanced VDMOSFETs, ID
8
is obtained by the self-aligned planar Technology which reduce
PD(TC=25℃)
75
the conduction loss, improve switching performance and
RDS(ON)Typ
0.36
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords with
the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤0.47Ω)
Low Gate Charge (Typical Data: 12.8nC)
Low Reverse transfer capacitances(Typical: 7.9pF)
100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
CS8N25A4R Datasheet
