CS8N25A8R Description
： VDSS 250 CS8N25 A8R, the silicon N-channel Enhanced VDMOSFETs, ID 8 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 75 the conduction loss, improve switching performance and RDS(ON)Typ 0.36 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS...
CS8N25A8R Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.47Ω)
- Low Gate Charge (Typical Data: 12.8nC)
- Low Reverse transfer capacitances(Typical: 7.9pF)
- 100% Single Pulse avalanche energy Test