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Silicon N-Channel Power MOSFET HGR11N04A-G
General Description：
VDSS
HGR11N04A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the
ID（Silicon limited current） PD
conduction loss, improve switching performance and enhance the
RDS(ON)Typ
avalanche energy. This device is suitable for use as A load switch and
PWM applications. the package form is PDFN3.3*3.3, which accords
with the RoHS standard.
Features：
● Fast Switching ● Low ON Resistance ● Low Gate Charge ● Low Reverse transfer capacitances
● 100% Single Pulse avalanche energy Test ● Halogen Free
Applications：
Power switch circuit of adaptor and charger.
®
45
V
41
A
29.2 W
8.
HGR11N04A-G Datasheet
