HGR11N04A-G Overview
： VDSS HGR11N04A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the ID（Silicon limited current） PD conduction loss, improve switching performance and enhance the RDS(ON)Typ avalanche energy. This device is suitable for use as A load switch and PWM applications. the package form is PDFN3.3 3.3, which accords with the RoHS standard.
HGR11N04A-G Key Features
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free