HPA650R420PC-G Datasheet | CR Micro

Description ： HPA650R420PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the Ro HS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V Features ： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Ω 1.4 u J Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 dv/dt dif/dt PD TJ，Tstg Drain-to-Source Voltage(VGS=0V) Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt MOSFET...