HPA800R900PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
l Halogen Free
l Zener-Protected.
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Silicon N-Channel Power MOSFET ○R HPA800R900PD-G General Description： HPA800R900PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology...
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channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the RoHS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V 850 V 6 A 21 W 0.8 Ω 1.4 uJ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free l Zener-Protected Applications： Power switch circuit of adaptor, cha
HPA800R900PD-G Datasheet
