HPN800R1K4PD-G Overview
： HPN800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is SOT-223-2L, which accords with the RoHS standard.