HPN800R1K4PD-G
Description
：
HPN800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is SOT-223-2L, which accords with the Ro HS standard.
VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V
Ω
0.77 u J
Features
： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free l Zener-Protected
Applications：
Power switch circuit of adaptor, charger and LED.
Absolute（Tj= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 dv/dt dif/dt
VESD(G-S)
TJ，Tstg
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche...
