HPU650R650PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
700
V
8
A
95
W
0.55
Ω
1.2
uJ.
Full PDF Text Transcription for HPU650R650PC-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HPU650R650PC-G. For precise diagrams, and layout, please refer to the original PDF.
Silicon N-Channel Power MOSFET ○R HPU650R650PC-G General Description： HPU650R650PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology...
View more extracted text
channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-251, which accords with the RoHS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 8 A 95 W 0.55 Ω 1.2 uJ Applications： Power switch circuit of adaptor and charger.
HPU650R650PC-G Datasheet
