CR Micro SKD502T
SkyMOS1 N-MOSFET
| Part No. | SKD502T |
|---|---|
| Datasheet | SKD502T Download |
| Manufacturer |  CR Micro |
| Description | SkyMOS1 N-MOSFET |
| Buy | Stock & Price |
FEATURES
● Uses CRM(CQ) advanced SkyMOS1 technology● Extremely low on-resistance RDS(on)
● Excellent QgxRDS(on) product(FOM)
● Qualified according to JEDEC criteria
APPLICATIONS
● Motor control and drive● Battery management
● UPS (Uninterrupible Power Supplies) Product Summary VDS 85V RDS(on) 4.6mΩ ID 120A 100% Avalanche Tested SKD502T SKSS055N08N Package Marking and Ordering Information Part # SKD502T SKSS055N08N Marking - Package TO-220 TO-263 Packing Tube Tube Reel Size N/A N/A Tape Width N/A N/A Qty 50pcs 50pcs
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Symbol VDS Value 85 Unit V ID 135 A 120 86 ID pulse 480 A EAS 144 mJ VGS ±20 V Ptot 174 W Tj , T stg -55...+150 °C ©China...
