Datasheet Summary
7.8 Amps，800Volts N-Channel MOSFET
- Description
The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
- Features
- RDS(ON) = 1.75 Ω@VGS = 10 V
- Low gate charge ( typical 27nC)
- High ruggedness
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
- Symbol
CFF/P8N80
- Ordering Information
Order Number
Normal
Lead Free Plating
HX8N80(C)-TA3-T
HX8N80(C)L-TA3-T
HX8N80(C)-TF3-T
HX8N80(C)L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N80(C)L-TA3-T
（1）Packing Type...