CRE8N80
CRE8N80 is N-Channel MOSFET manufactured by CRE.
Description
The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
- Features
- RDS(ON) = 1.75 Ω@VGS = 10 V
- Low gate charge ( typical 27n C)
- High ruggedness
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
- Symbol
CFF/P8N80
- Ordering Information
Order Number
Normal
Lead Free Plating
HX8N80(C)-TA3-T
HX8N80(C)L-TA3-T
HX8N80(C)-TF3-T
HX8N80(C)L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N80(C)L-TA3-T
（1）Packing Type （2）Package Type
（3）Lead Plating
Package
TO-220 TO-220F
Pin Assignment 123 GD S GD S
Packing
Tube Tube
(1)T:Tube,R:Tape Reel (2)TA3:TO-220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn
- Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings TO-220 TO-220F
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃ Tc=100℃
Drain Current...
