CRE CRE8N80
The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.| Part No. | CRE8N80 |
|---|---|
| Datasheet | CRE8N80 Download |
| Manufacturer | CRE |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
RDS(ON) = 1.75 Ω@VGS = 10 V Low gate charge ( typical 27nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability● Symbol CFF/P8N80
● Ordering Information Order Number Normal Lead Free Plating HX8N80(C)-TA3-T HX8N80(C)L-TA3-T HX8N80(C)-TF3-T HX8N80(C)L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source HX8N80(C)L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating Package TO-220 TO-220F Pin Assignment 123 GD S GD S Packing Tube Tube (1)T:Tube,R:Tape Reel (2)TA3:TO-220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn
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ABSOLUTE MAXIMUM RATINGS
(Tc=25℃,unless otherwise specified) Parameter Symbol Ratings TO-220 TO-220F Drain-Source Voltage VDSS 800 Gate-Source Voltage Drain Currenet Continuous Tc=25℃ Tc=100℃ Drain Current Pulsed (Note 1) VGSS ID IDP 7.8 4.5 26.4 ±30 7.8＊ 4.5＊ 26.4＊ Avalanche Energy Repetitive (Note 1) Single Pulse (Note 2) EAR EAS 6.6 580 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 Total Power Dissipation T...
