HX8N80 Overview
The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
HX8N80 Key Features
- RDS(ON) = 1.75 Ω@VGS = 10 V
- Low gate charge ( typical 27nC)
- High ruggedness
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
- Symbol
- Ordering Information