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C3M0120100J - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • C3MTM SiC MOSFET technology.
  • Low parasitic inductance with separate driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low On-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Low output capacitance (60pF).
  • Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Redu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency TAB Drain 1234567 G KS S S S S S Applications • Renewable energy • EV battery chargers • High voltage DC/DC conv