Datasheet4U.com

C3M0350120J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

Package.
3rd generation SiC MOSFET technology.
Low impedance package with driver source pin.
7mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.

CREE

📥 Download Datasheet

C3M0350120J Silicon Carbide Power MOSFET by CREE - Datasheet Preview — Datasheet preview – C3M0350120J

Datasheet Details

Part number	C3M0350120J
Manufacturer	CREE
File Size	910.04 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0350120J Datasheet
Additional preview pages of the C3M0350120J datasheet.

📁 Similar Datasheet

C3M0350120J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0350120D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0015065D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0015065K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0016120D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0016120K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0016120K1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0021120D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0021120J2 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0021120K - Silicon Carbide Power MOSFET (Wolfspeed)

Other Datasheets by CREE

C3M0016120D - Silicon Carbide Power MOSFET
C3M0016120K - Silicon Carbide Power MOSFET
C3M0021120D - Silicon Carbide Power MOSFET
C3M0021120K - Silicon Carbide Power MOSFET
C3M0030090K - Silicon Carbide Power MOSFET
C3M0032120D - Silicon Carbide Power MOSFET
C3M0032120J1 - Silicon Carbide Power MOSFET
C3M0032120K - Silicon Carbide Power MOSFET

Full PDF Text Transcription

Click to expand full text

VDS 1200 V C3M0350120J ID @ 25˚C 7.

Published: Nov 20, 2024 |