C3M0350120J Description
VDS 1200 V C3M0350120J ID @ 25˚C 7.2 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 350 mΩ N-Channel Enhancement Mode.
C3M0350120J Key Features
- 3rd generation SiC MOSFET technology
- Low impedance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency