C3M0350120J
Key Features
- 3rd generation SiC MOSFET technology
- Low impedance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS pliant Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
Applications
- Renewable energy
