Description
P-N Junction Area (μm) Chip Top Area (μm) Chip Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Bonding Area Note 5 Diameter (μm) Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm)
CxxxUT190-Sxxxx-31
Dimension
Tolerance
160 x 160
± 25
190 x 190
± 25
150 x 150
± 25
50
Features
- Wavelengths for Blue, Green and White-conversion.
- 50 mm Chip Thickness.
- RF Performance:.
- 450 nm.
- 12+ mW.
- 460 nm.
- 10+ mW.
- 470 nm.
- 10+ mW.
- 527 nm.
- 4+ mW.
- Low Forward Voltage.
- 2.9 V Typical at 5 mA.
- Conductive Adhesive Die Attach.
- Single Wire Bond, Vertically Conductive Structure.
- 2kV Class 2 ESD Rating
CxxxUT190-Sxxxx-31 Chip Diagram.
C470UT190 Datasheet
