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C4D15120H - Silicon Carbide Schottky Diode

Key Features

  • 1.2kV Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance Benefits.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • Paralle.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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C4D15120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • • Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Free Wheeling Diodes in Inverter stages • AC/DC converters Package VRRM = IF (TC=135˚C) = Qc = 1200 V  19 A  77.