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C6D10065A - Silicon Carbide Schottky Diode

Key Features

  • New 6th Generation Technology.
  • Low Forward Voltage Drop (VF) Zero Reverse Recovery Current.
  • Zero Forward Recovery Voltage.
  • Low Leakage Current (Ir) Temperature-Independent Switching Behavior.
  • Positive Temperature Coefficient on VF Benefits.
  • Higher System Level Efficiency.
  • Increase System Power Density.
  • Reduction of Heat Sink Requirements.
  • Parallel Devices Without Thermal Runaway Applica.

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Part Number Description
C6D10065 Silicon Carbide Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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C6D10065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • New 6th Generation Technology • • Low Forward Voltage Drop (VF) Zero Reverse Recovery Current • Zero Forward Recovery Voltage • • Low Leakage Current (Ir) Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Efficiency • Increase System Power Density • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway Applications • Switch Mode Power Supplies (SMPS) • Server/Telecom Power Supplies • Industrial Power Supplies • Solar • UPS Package VRRM = IF (TC=155˚C)  = Qc = 650 V 10 A 34 nC TO-220-2 PIN 1 PIN 2 CASE Part Number C6D10065A Package TO-220-2 Marking C6D10065 Maximum Ratings (TC = 25 ˚C unless otherwise specifie