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CAB450M12XM3 - Half-Bridge Module

Key Features

  • High Power Density Footprint.
  • High Junction Temperature (175 °C) Operation.
  • Low Inductance (6.7 nH) Design.
  • Implements Conduction Optimized Third Generation SiC MOSFET Technology.
  • Silicon Nitride Insulator and Copper Baseplate.

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VDS 1200 V CAB450M12XM3 IDS 450 A 1200V, 450A All-Silicon Carbide 5432 Conduction Optimized, Half-Bridge Module Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate Applications • Motor & Traction Drives • Vehicle Fast Chargers • Uninterruptable Power Supplies • Smart-Grid / Grid-Tied Distributed Generation System Benefits Pa ckage 80 x 53 x 19 mm D V+ G1 C K1 G2 K2 B V+ Mid NTC2 NTC NTC1 V- • Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.