Datasheet Details
| Part number | CGHV96050F1 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 1.59 MB |
| Description | Input/Output Matched GaN HEMT |
| Datasheet | CGHV96050F1-CREE.pdf |
|
|
Overview: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN.
| Part number | CGHV96050F1 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 1.59 MB |
| Description | Input/Output Matched GaN HEMT |
| Datasheet | CGHV96050F1-CREE.pdf |
|
|
|
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies.
GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
| Part Number | Description |
|---|---|
| CGHV96100F2 | Input/Output Matched GaN HEMT / Power Amplifer |
| CGHV14250 | GaN HEMT |
| CGHV14500 | GaN HEMT |
| CGHV14800 | GaN HEMT |
| CGHV14800F | GaN HEMT |
| CGHV1F006S | GaN HEMT |
| CGHV1F025S | GaN HEMT |
| CGHV1J006D | GaN HEMT Die |
| CGHV1J070D | GaN HEMT Die |
| CGHV22100 | GaN HEMT |