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CGHV96050F1 - Input/Output Matched GaN HEMT

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CREE

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CGHV96050F1 Input/Output Matched GaN HEMT by CREE - Datasheet Preview — Datasheet preview – CGHV96050F1

Datasheet Details

Part number	CGHV96050F1
Manufacturer	CREE
File Size	1.59 MB
Description	Input/Output Matched GaN HEMT
Datasheet	CGHV96050F1 Datasheet
Additional preview pages of the CGHV96050F1 datasheet.

CGHV96050F1 Product details

Description

Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.

Features

7.9 - 8.4 GHz Operation.
80 W POUT typical >13 dB Power Gain.
33% Typical PAE.
50 Ohm Internally Matched.

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Published: May 6, 2016 |