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CMPA5259025F Datasheet PDF

CREE CMPA5259025F

CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Part No. CMPA5259025F
Datasheet CMPA5259025F Download
Manufacturer
CREE
Description GaN MMIC
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CMPA5259025F datasheet page 1 preview

FEATURES

● 30 dB Small Signal Gain
● 50% Efficiency at PSAT
● Operation up to 28 V
● High Breakdown Voltage

APPLICATIONS

● Radar Rev 0.1 – January 2019 Subject to ch
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