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CMPA5259025F
25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers
Cree’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
PacPkNa:geCMTyPpAe5:245490022159F
Typical Performance Over 5.2-5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.5 GHz
5.9 GHz
Small Signal Gain
33.6
31.9
32.2
Output Power
38.5
39.6
34.8
Efficiency
53.5
51.3
47.2
Input Return Loss
-13.5
-15.5
-4.
CMPA5259025F Datasheet
