CPM2-1200-0080B Datasheet PDF - CREE Silicon Carbide Power MOSFET Specs

CPM2-1200-0080B - Silicon Carbide Power MOSFET

Datasheet Summary

Features

Package ID @ 25˚C 31.6 A RDS(on) 80 mΩ N-Channel Enhancement Mode.
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits.
Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency.

Datasheet Details

Part number	CPM2-1200-0080B
Manufacturer	CREE
File Size	371.91 KB
Description	Silicon Carbide Power MOSFET
Datasheet	CPM2-1200-0080B Datasheet
Additional preview pages of the CPM2-1200-0080B datasheet.

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Full PDF Text Transcription

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VDS 1200 V CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 31.6 A RDS(on) 80 mΩ N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies UPS http://www.DataSheet4U.net/ Part Number CPM2-1200-0080B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 31.

Published: Mar 22, 2013 |