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CPW2-0650-S010B - Silicon Carbide Schottky Diode

Key Features

  • 650-Volt Schottky Rectifier.
  • Zero Reverse Recovery.
  • Zero Forward Recovery.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF Chip Outline VRRM = 650 V IF(AVG) =  10 A Qc = 24 nC Datasheet: CPW2-0650-S010B Rev. B, 02-2017 Part Number CPW2-0650-S010B Die Size 1.92 x 1.92 mm2 Anode Al Cathode Ni/Ag Ma.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPW2-0650-S010B Silicon Carbide Schottky Diode Chip Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery • Zero Forward Recovery • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Chip Outline VRRM = 650 V IF(AVG) =  10 A Qc = 24 nC Datasheet: CPW2-0650-S010B Rev. B, 02-2017 Part Number CPW2-0650-S010B Die Size 1.92 x 1.