• Part: E4D10120A
  • Description: Silicon Carbide Schottky Diode
  • Manufacturer: Cree
  • Size: 596.68 KB
Download E4D10120A Datasheet PDF
E4D10120A page 2
Page 2
E4D10120A page 3
Page 3

E4D10120A Key Features

  • 4th Generation SiC Merged PIN Schottky Technology
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • AEC-Q101 Qualified and PPAP Capable
  • Humidity Resistant
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements