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E4D10120A - Silicon Carbide Schottky Diode

Key Features

  • Package.
  • 4th Generation SiC Merged PIN Schottky Technology.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • AEC-Q101 Qualified and PPAP Capable.
  • Humidity Resistant Benefits TO-220-2.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • Parallel Devices W.

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E4D10120A Silicon Carbide Schottky Diode E-Series Automotive Features Package • 4th Generation SiC Merged PIN Schottky Technology • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • AEC-Q101 Qualified and PPAP Capable • Humidity Resistant Benefits TO-220-2 • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway • Ideal for Outdoor Environments Applications PIN 1 PIN 2 • Boost diodes in PFC or DC/DC stages • Free Wheeling Diodes in Inverter stages • AC/DC converters • Automotive and Traction Power Conversion • PV Inverters Part Number E4D10120A VDS 900 V ID @ 25˚C 11.