Part E4D10120A
Description Silicon Carbide Schottky Diode
Category Diode
Manufacturer Cree
Size 596.68 KB
Cree

E4D10120A Overview

Key Features

  • 4th Generation SiC Merged PIN Schottky Technology
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • AEC-Q101 Qualified and PPAP Capable
  • Humidity Resistant Benefits TO-220-2
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements