E4D20120G Overview
E4D20120G Silicon Carbide Schottky Diode E-Series Automotive.
E4D20120G Key Features
- 4th Generation SiC Merged PIN Schottky Technology
- Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- AEC-Q101 Qualified and PPAP Capable
- Humidity Resistant
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements
E4D20120G Applications
- Boost diodes in PFC or DC/DC stages
- Free Wheeling Diodes in Inverter stages
