• Part: E4D20120G
  • Manufacturer: Cree
  • Size: 2.74 MB
Download E4D20120G Datasheet PDF
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E4D20120G Key Features

  • 4th Generation SiC Merged PIN Schottky Technology
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • AEC-Q101 Qualified and PPAP Capable
  • Humidity Resistant
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements

E4D20120G Description

E4D20120G Silicon Carbide Schottky Diode E-Series Automotive.

E4D20120G Applications

  • Boost diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages