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E4D20120G - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Package.
  • 4th Generation SiC Merged PIN Schottky Technology.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • AEC-Q101 Qualified and PPAP Capable.
  • Humidity Resistant Benefits TO-263-2.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • Parallel Devices Without Ther.

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Datasheet preview – E4D20120G

Datasheet Details

Part number E4D20120G
Manufacturer CREE
File Size 2.74 MB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet E4D20120G Datasheet
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Full PDF Text Transcription

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E4D20120G Silicon Carbide Schottky Diode E-Series Automotive Features Package • 4th Generation SiC Merged PIN Schottky Technology • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • AEC-Q101 Qualified and PPAP Capable • Humidity Resistant Benefits TO-263-2 • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway • Ideal for Outdoor Environments PIN 1 PIN 2 Applications • Boost diodes in PFC or DC/DC stages • Free Wheeling Diodes in Inverter stages • AC/DC converters • Automotive and Traction Power Conversion • PV Inverters Part Number E4D20120G VDS ID @ 25˚C RDS(on) 900 V 11.
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