CRMCTH1017A Description
Features l 100V, 75A D RDS(ON) Typ = 9.9mΩ @ VGS = 10V icroelectronics l Advanced Trench Technology l Excellent RDS(ON) and Low Gate Charge l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Drain to Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS = 0V, IS = 30A IF = 25A, di/dt = 100A/us.