CRMGBL0413A Overview
Features l -40V, -40A D RDS(ON) Typ = 8.7mΩ @ VGS = -10V RDS(ON) Typ = 12.5mΩ @ VGS = -4.5V l Advanced Trench Technology s l Excellent RDS(ON) and Low Gate Charge ic l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse...