CRMKGL1010B Description
Features l 100V, 60A D RDS(ON) Typ = 9.2mΩ @ VGS = 10V RDS(ON) Typ = 11.6mΩ @ VGS = 4.5V l Advanced Split Gate Trench Technology s l Excellent RDS(ON) and Low Gate Charge ic l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0V, IS = 20A.