CRMPGL0814A Description
Features l 85V, 9A D RDS(ON) Typ = 14mΩ @ VGS = 10V RDS(ON) Typ = 17.5mΩ @ VGS = 4.5V l Advanced Split Gate Trench Technology s l Excellent RDS(ON) and Low Gate Charge ic l Lead Free n l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Body Diode Reverse Recovery Time...