CRMQBU0208B Description
Features l -20V, -55A D RDS(ON) Typ = 5.8mΩ @ VGS = -4.5V RDS(ON) Typ = 7.8mΩ @ VGS = -2.5V l Advanced Trench Technology s l Excellent RDS(ON) and Low Gate Charge ic l Lead Free n l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Body Diode Reverse Recovery Time Body...