CRMRBTU0203AD Overview
Features l 20V, 50A D1 D2 RDS(ON) Typ = 3.8mΩ @ VGS = 4.5V RDS(ON) Typ = 4.9mΩ @ VGS = 2.5V l Advanced Trench Technology s l Excellent RDS(ON) and Low Gate Charge ic l Lead Free n l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0V, IS = 5A.