CRMSC60M040F Datasheet | CRM Microelectronics

Description Features D l 600V, 76A RDS(ON) Typ = 30mΩ@ VGS = 10V l Ultra-fast body diode G l Extremely low losses due to very low Eon and Eoff s l Qualified for industrial grade applications according to JEDEC ic l 100% avalanche tested Schematic Diagram n Application o l Uninterruptible Power Supply (UPS) tr l Switch Mode Power Supply (SMPS) c l Power Factor Correction (PFC) le Package Marking and Ordering Information Marking and Pin Assignment e Device Marking Package Outline TUBE(pcs) Inner Box(pcs) Per Carton (pcs) o CRMSC60M040F CRMSC60M040F TO-247-3L TUBE 2000 r Absolute Maximum Ratings (@ TJ = 25°C unless otherwise specified) ic Symbol Parameter Drain-to-Source Voltage M VGS Gate-to-Source Voltage(static) Value 600 ±20 Units IDM EAS IS CRM Gate-to-Source Voltage(dynamic) Continuous Drain Current(1) Pulsed Drain Current (2) Single Pulsed Avalanche Energy Continuous diode forward current AC(f>1 Hz) TC = 25°C TC = 100°C TC = 25°C VDD=50V;L=10m H TC = 25°C ±30 480 m J IS,pluse Diode pluse current(2) TC = 25°C A di F/dt Maximum diode mutation speed VDS=0...400V,ISD<=...