CRMTGH2010A Description
Features l 200V, 110A D RDS(ON) Typ = 9.3mΩ @ VGS = 10V l Advanced Split Gate Trench Technology l Excellent RDS(ON) and Low Gate Charge s l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Drain to Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS = 0V, IS = 30A IF = 50A, di/dt = 100A/us.