CRST055N09N
CRST055N09N is N-MOSFET manufactured by CRM.
Features
- Uses CRM(CQ) advanced Sky MOS1 technology
- Extremely low on-resistance RDS(on)
- Excellent Qgx RDS(on) product(FOM)
- Qualified according to JEDEC criteria
Applications
- Motor control and drive
- Battery management System
- UPS (Uninterrupible Power Supplies)
Product Summary
VDS RDS(on).typ ID
90V 4.6mΩ 130A
100% DVDS Tested 100% Avalanche Tested
Package Marking and Ordering Information
Part #
Marking
CRST055N09N CRST055N09N
Package TO-220
Packing Tube
Reel Size N/A
Tape Width N/A
Qty 50pcs
Absolute Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
TC = 25°C (Silicon limit) TC = 25°C (Package limit)
TC = 100°C (Silicon limit)
Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (ID = 46A, Rg=25Ω)[1]
ID pulse EAS
Gate-Source voltage
Power dissipation (TC = 25°C)
Ptot
Operating junction and storage temperature
Tj , T stg
※. Notes: 1.EAS is tested at starting Tj = 25℃, L = 0.5m H, IAS =46A, VGS =...
