CRTD360N10LZ Description
华润微电子(重庆)有限公司 CRTD360N10LZ Trench N-MOSFET 100V, 30mΩ, 36A.
CRTD360N10LZ Key Features
- Uses CRM(CQ) advanced Trench MOS technology
- Extremely low on-resistance RDS(on)
- Excellent QgxRDS(on) product(FOM)
- Qualified according to JEDEC criteria
- AEC-Q101 Pass