Description
The CT11XX-W, CT11XXL-W series consists of a photo transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 5-lead SOP Package. Package Outline Schematic CT Micro Proprietary & Confidential Page 1 CT1110-W, CT1111-W, CT1112-W, CT1113-W, CT1114-W CT1115-W, CT1116-W, CT1117-W, CT1118-W, CT1119-W CT1110L-W, CT1111L-W, CT1112L-W, CT1113L-W, CT1114L-W CT1115L-W, CT1116L-W, CT1117L-W, CT1118L-W, CT1119L-W DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters VISO Isolation voltage *1 TOPR Operating temperature TSTG Storage temperature TSOL Soldering temperature *2 Emitter IF Forward current IF(TRANS) Peak transient current (≤1μs P.W,300pps) VR Reverse voltage PD Power dissipation Detector PD Power dissipation BVCEO Collector-Emitter Breakdown Voltage BVECO Emitter-Collector Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage IC Collector Current Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient TJ Junction temperature Note: 1.
Key Features
- High isolation 5000 VRMS
- CTR flexibility available see order information
- Extra low coupling capacitance
- DC input with transistor output
- OperatingTemperature range - 55 °C to 125 °C
- Green Package
