CT3331-R3 - P-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CT3331-R3
Manufacturer	CT Micro
File Size	2.50 MB
Description	P-Channel MOSFET
Datasheet	CT3331-R3 Datasheet
Additional preview pages of the CT3331-R3 datasheet.

Product details

Description

The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Features

Drain-Source Breakdown Voltage VDSS - 200 V.
Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,.
Continuous Drain Current at TA=25 ID = - 0.4A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.
ESD Protection.

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Published: May 20, 2020 |