CT3331-R3
CT3331-R3 is P-Channel MOSFET manufactured by CT Micro.
CT3331-R3 P-Channel Enhancement MOSFET
Features
- Drain-Source Breakdown Voltage VDSS
- 200 V
- Drain-Source On-Resistance
RDS(ON) 2.3Ω, at VGS=
- 10V, IDS=
- 0.2A RDS(ON) 2.4Ω, at VGS=
- 4.5V, IDS=
- 0.2A
℃,- Continuous Drain Current at TA=25 ID =
- 0.4A
- Advanced high cell density Trench Technology
- Ro HS pliance & Halogen Free
- ESD Protection
Applications
- Switches
- Power supply circuits
- Motor controls
- Drivers
Description
The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source...
