CT3A01-R3
CT3A01-R3 is N-Channel MOSFET manufactured by CT Micro.
CT3A01-R3 N-Channel Enhancement MOSFET
Features
- Drain-Source Breakdown Voltage VDSS 20 V
- Drain-Source On-Resistance
- RDS(ON) 55mΩ, at VGS= 4.5V, ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A
℃- Continuous Drain Current at TA=25 ID = 3.2A
- Advanced high cell density Trench Technology
- Ro HS pliance & Halogen Free
Description
The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
Applications
- Power Management
- Portable Equipment
- Load switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 4 Jun, 2015
CT3A01-R3 N-Channel Enhancement...
