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CT3A01-R3 - N-Channel MOSFET

General Description

The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.

Power Management Portable Equipment Load switch Package Outline Schematic D

Key Features

  • Drain-Source Breakdown Voltage VDSS 20 V.
  • Drain-Source On-Resistance.
  • RDS(ON) 55mΩ, at VGS= 4.5V, ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A ℃.
  • Continuous Drain Current at TA=25 ID = 3.2A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number CT3A01-R3
Manufacturer CT Micro
File Size 764.08 KB
Description N-Channel MOSFET
Datasheet download datasheet CT3A01-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT3A01-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance • RDS(ON) 55mΩ, at VGS= 4.5V, ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A ℃• Continuous Drain Current at TA=25 ID = 3.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.